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特种气体中单元高纯气体的品种及用途
特种气体是由两大类气体组成的。一类为单元高纯气体,另一类为混合气体。到目前为止,特种气体中单元纯气体共有260种,其中:
Special gases are made up of two major gases. One is high purity gas and the other is mixed gas. Up to now, there are 260 kinds of pure gases in special gases:
电子气体共114种,占总数的43.8%(实际常用的约44种);
There are 114 kinds of electronic gases, accounting for 43.8% of the total (about 44 commonly used);
有机气体共65种,占总数的25%;
There are 65 kinds of organic gas, accounting for 25% of the total;
无机气体共35种,占总数的13.4%;
There are 35 kinds of inorganic gas, accounting for 13.4% of the total;
卤碳素气体共29种,占总数的11%;
There are 29 kinds of halogen carbon gas, accounting for 11% of the total;
同位素气体共17种,占总数的6.8%。
There are 17 species of isotope gas, accounting for 6.8% of the total.
本文专门介绍这260种单元高纯特种气体的用途。
The purpose of this paper is to introduce the use of these 260 units of high purity gases.
1.氮气-N2,纯度要求>99.999%,用作标准气、在线仪表标准气、校正气、零点气、平衡气；用于半导体器件制备工艺中外延、扩散、化学气相淀积、离子注入、等离子干刻、光刻、退火、搭接、烧结等工序；电器、食品包装、化学等工业也要用氮气。
1. nitrogen -N2, purity >99.999%, used as a standard gas, standard gas, calibration gas meter, gas, zero balance gas; for the preparation of a semiconductor device epitaxy, diffusion, chemical vapor deposition, ion implantation process, plasma dry etching, lithography, annealing, lapping, sintering processes; electrical appliances, food packaging the chemical industry, but also with nitrogen.
2.氧气-O2,>99.995%,用作标准气在线仪表标准气、校正气、零点气；还可用于医疗气；在半导体器件制备工艺中用于热氧化、扩散、化学气相淀积、等离子干刻等工序；以及用于光导纤维的制备。
2. oxygen -O2, >99.995%, used as a standard gas online instrument standard gas, calibration gas and zero gas; also can be used for medical gas; in the manufacturing process of semiconductor devices for thermal oxidation, diffusion, chemical vapor deposition, plasma dry etching processes; and for the preparation of optical fiber.
3.氩气-Ar,>99.999,用作标准气、零点气、平衡气；用于半导体器件制备工艺中晶体生长、热氧化、外延、扩散、氮化、喷射、等离子干刻、载流、退火、搭接、烧结等工序；特种混合气与工业混合气也使用氢。
3. -Ar >99.999 is used as the standard, argon, gas, gas and gas zero balance; for a semiconductor device in the preparation process of crystal growth and epitaxy, thermal oxidation, diffusion, nitriding, plasma spraying, dry etching, load flow, annealing, lapping and sintering process; special mixed gas and industrial gas mixed use of hydrogen.
4.氢气-H2,>99.999%,用作标准气、零点气、平衡气、校正气、在线仪表标准气；在半导体器件制备工艺中用于晶休生长、热氧化、外延、扩散、多晶硅、钨化、离子注入、载流、烧结等工序；在化学、冶金等工业中也有用。
4. -H2 >99.999% is used as the standard, hydrogen, gas, gas, gas, zero balance calibration gas and on-line instrument standard gas; in the semiconductor device fabrication techniques for crystal growth, thermal oxidation, epitaxy, diffusion, polycrystalline silicon, tungsten, ion implantation, load flow, sintering process is also useful in chemistry and metallurgy; industry.
5.氦气-He,>99.999%,用作标准气、零点气、平衡气、校正气、医疗气；于半导体器件制备工艺中晶体生长、等离子干刻、载流等工序；另外,特种混合气与工业混合气也常用。
5. helium -He, >99.999%, used as standard gas, zero point gas, balance gas, positive Qi, medical gas; semiconductor devices in the preparation process of crystal growth, plasma drying, carrying current and other processes; in addition, special mixed gas and industrial mixed gas is also commonly used.
6.氯气-Cl2,>99.96%,用作标准气、校正气；用于半导体器件制备工艺中晶体生长、等离子干刻、热氧化等工序；另外,用于水净化、纸浆与纺织品的漂白、下业废品、污水、游泳池的卫生处理；制备许多化学产品。
6. -Cl2 >99.96% is used as the standard, chlorine gas, gas, calibration gas; used for semiconductor devices in the preparation process of crystal growth, plasma dry etching and thermal oxidation processes; in addition, used for water purification, bleaching, pulp and textile industry, sewage, waste pool sanitary treatment; the preparation of a variety of chemical products.
7.氟气-F2,>98%,用于半导体器件制备工艺中等离子干刻；另外,用于制备六氟化铀、六氟化硫、三氟化硼和金属氟化物等。
7. fluorine gas -F2, >98%, used in the manufacturing process of semiconductor devices in plasma dry etching; in addition, for the preparation of uranium hexafluoride, six sulfur hexafluoride, three boron trifluoride and metal fluoride etc..
8.氨气-NH3,>99.995%,用作标准气、校正气、在线仪表标准气；用于半导体器件制备工艺中氮化工序；另外,用于制冷、化肥、石油、采矿、橡胶等工业。
8. ammonia -NH3, >99.995%, used as standard gas, calibration gas, on-line instrument standard gas; used in semiconductor device preparation process nitriding process; in addition, used in refrigeration, chemical fertilizer, petroleum, mining, rubber and other industries.
9.氯化氢-HCI,>99.995%,用作标准气；用于半导体器件制备工艺中外延、热氧化、扩散等工序；另外,用于橡胶氯氢化反应中的化学中间体、生产乙烯基和烷基氯化物时起氧氯化作用。
9. hydrogen chloride -HCI, >99.995%, used as standard gas; used in the process of semiconductor device preparation, thermal oxidation, diffusion and other processes; in addition, the chemical intermediates used in the rubber chlorine hydrogenation reaction, the production of vinyl and alkyl chloride oxygen chlorination.
10.一氧化氮-NO,>99%,用作标准气、校正气；用于半导体器件制备工艺中化学气相淀积主序；制备监控大气污染的标准混合气。
10. nitric oxide -NO, >99%, used as standard gas and calibration gas; used in semiconductor device preparation process of chemical vapor deposition main sequence; preparation of standard mixture to monitor atmospheric pollution.
11.二氧化碳-CO2,>99.99%,用作标准气、在线仪表标推气、校正气；于半导体器件制备工艺中氧化、载流工序警另外,还用于特种混合气、发电、气体置换处理、杀菌气体稀释剂、灭火剂、食品冷冻、金属冷处理、饮料充气、烟雾喷射剂、食品贮存保护气等。
11. -CO2 >99.99% is used as the standard, carbon dioxide, gas, gas, on-line instrument standard calibration gas; in the manufacturing process of semiconductor devices in the current process of police oxidation, in addition, also for special mixed gas, power generation, gas replacement treatment, sterilization of gas fire extinguishing agent, diluent, freezing, food processing, beverage filling, cold metal the smoke spraying agent, food storage and protective gas.
12.氧化亚氮-N2O,(即笑气),>99.999%,用作标准气、医疗气；用于半导体器件制备工艺中化学气相淀积、医月麻醉剂、烟雾喷射剂、真空和带压检漏；红外光谱分析仪等也用。
12. Nitrous Oxide -N2O (i.e., >99.999%, nitrous oxide) is used as the standard for medical gas, gas; semiconductor devices in the preparation process of chemical vapor deposition, medicine, anesthetic agent, smoke injection June and vacuum pressure leak detection; infrared spectrum analyzer is used.
13.硫化氢-H2S,>99.999%,用作标准气、校正气；用于半导体器件制备工艺中等离子干刻,化学工业中用于制备硫化物,如硫化钠,硫化有机物；用作溶剂；实验室定量分析用。
13. hydrogen sulfide, -H2S, >99.999%, used as standard gas and vital energy; used for plasma drying in semiconductor device manufacturing process; used in the chemical industry to prepare sulfides, such as sodium sulfide, sulfide organic compounds; used as solvent; quantitative analysis in laboratory.
14.四氯化碳-CCl4,>99.99%,用作标准气；用于半导体器件制备工艺中外延丫、化学气相淀积等工序；另外,用作溶剂、有机物的氯化剂、香料的浸出剂、纤维的脱脂剂、灭火剂、分析试剂、制备氯仿和药物等。
14. -CCl4 >99.99% is used as the standard, carbon tetrachloride, gas; semiconductor device for preparation of epitaxial y, chemical vapor deposition processes; in addition, used as a solvent, organic chlorination agent, spice leaching agent, fiber degreasing agent, fire extinguishing agent, analytical reagent, preparation of chloroform and drugs etc..
15.氰化氢-HCN,>99.9,用于半导体器件制备工艺中等离子干刻工序；制备氢氰酸溶液,金属氰化物、氰氯化物；也用于制备丙烯睛和丙烯衍生物的合成中间体。
15. -HCN >99.9, hydrogen cyanide, used in the manufacturing process of semiconductor devices in plasma dry etching process; preparation of hydrocyanic acid solution, metal cyanide, cyanogen chloride; also used in the synthesis of intermediates for preparing acrylonitrile and propylene derivatives.
16.碳酰氟-COF2,>99.99%,用于半寻体器件制备工艺中等离子干刻工序；另外,用作氟化剂。
16. carbonyl fluoride -COF2, >99.99%, used in the plasma preparation process of semi physical device preparation; in addition, as a fluoride agent.
17.碳酰硫-COS,>99.99%,用作校正气；用于半导体器件制备工艺中离子注入工序；也用于有些羧基、硫代酸、硫代碳酸盐和噻唑的合成。
17. carbonyl sulfur -COS, >99.99%, used as a vital energy; used in semiconductor device preparation process ion implantation process; also used in the synthesis of some carboxyl, thio acid, thio carbonate and thiazole.
18.碘化氢-HI,>99.95%,用于半导体器件制备工艺中离子注入工序；还用于氢碘酸溶液制备。
18. -HI >99.95%, hydrogen iodide, used in the manufacturing process of semiconductor devices in ion implantation process; also used in hydrogen iodate solution preparation.
19.嗅化氢-HBr,>99.9%,用于半导体制备工艺中等离子干刻工序；用作还原剂,制备有机及无机澳化合物。
19. hydrogen peroxide -HBr, >99.9%, used in the plasma preparation process of semiconductor preparation process; as a reducing agent, the preparation of organic and inorganic Australian compounds.
20.硅烷-SiH4,>99.999%,电阻率>100Ω/cm2,用于半导体器件制备工艺中外延、化学气相淀积等工序。
20. silane -SiH4, >99.999%, resistivity >100 ohm /cm2, used in semiconductor device preparation process epitaxy, chemical vapor deposition and other processes.
21.乙硅烷-Si2H6,>99.9%,用于半导体制备工艺中化学气相淀积。
21. silane -Si2H6, >99.9%, used for chemical vapor deposition in semiconductor fabrication process.
22.磷烷-PH3,>99.999%,用于半导体器件制备工艺中外延、扩散、化学气相淀积、离子注入等工序；磷烷与二氧化碳混合的
22., -PH3, >99.999%, used in the process of semiconductor device epitaxy, diffusion, chemical vapor deposition, ion implantation and other processes; mixed with phosphorus and carbon dioxide
Special gases are made up of two major gases. One is high purity gas and the other is mixed gas. Up to now, there are 260 kinds of pure gases in special gases:
电子气体共114种,占总数的43.8%(实际常用的约44种);
There are 114 kinds of electronic gases, accounting for 43.8% of the total (about 44 commonly used);
有机气体共65种,占总数的25%;
There are 65 kinds of organic gas, accounting for 25% of the total;
无机气体共35种,占总数的13.4%;
There are 35 kinds of inorganic gas, accounting for 13.4% of the total;
卤碳素气体共29种,占总数的11%;
There are 29 kinds of halogen carbon gas, accounting for 11% of the total;
同位素气体共17种,占总数的6.8%。
There are 17 species of isotope gas, accounting for 6.8% of the total.
本文专门介绍这260种单元高纯特种气体的用途。
The purpose of this paper is to introduce the use of these 260 units of high purity gases.
1.氮气-N2,纯度要求>99.999%,用作标准气、在线仪表标准气、校正气、零点气、平衡气；用于半导体器件制备工艺中外延、扩散、化学气相淀积、离子注入、等离子干刻、光刻、退火、搭接、烧结等工序；电器、食品包装、化学等工业也要用氮气。
1. nitrogen -N2, purity >99.999%, used as a standard gas, standard gas, calibration gas meter, gas, zero balance gas; for the preparation of a semiconductor device epitaxy, diffusion, chemical vapor deposition, ion implantation process, plasma dry etching, lithography, annealing, lapping, sintering processes; electrical appliances, food packaging the chemical industry, but also with nitrogen.
2.氧气-O2,>99.995%,用作标准气在线仪表标准气、校正气、零点气；还可用于医疗气；在半导体器件制备工艺中用于热氧化、扩散、化学气相淀积、等离子干刻等工序；以及用于光导纤维的制备。
2. oxygen -O2, >99.995%, used as a standard gas online instrument standard gas, calibration gas and zero gas; also can be used for medical gas; in the manufacturing process of semiconductor devices for thermal oxidation, diffusion, chemical vapor deposition, plasma dry etching processes; and for the preparation of optical fiber.
3.氩气-Ar,>99.999,用作标准气、零点气、平衡气；用于半导体器件制备工艺中晶体生长、热氧化、外延、扩散、氮化、喷射、等离子干刻、载流、退火、搭接、烧结等工序；特种混合气与工业混合气也使用氢。
3. -Ar >99.999 is used as the standard, argon, gas, gas and gas zero balance; for a semiconductor device in the preparation process of crystal growth and epitaxy, thermal oxidation, diffusion, nitriding, plasma spraying, dry etching, load flow, annealing, lapping and sintering process; special mixed gas and industrial gas mixed use of hydrogen.
4.氢气-H2,>99.999%,用作标准气、零点气、平衡气、校正气、在线仪表标准气；在半导体器件制备工艺中用于晶休生长、热氧化、外延、扩散、多晶硅、钨化、离子注入、载流、烧结等工序；在化学、冶金等工业中也有用。
4. -H2 >99.999% is used as the standard, hydrogen, gas, gas, gas, zero balance calibration gas and on-line instrument standard gas; in the semiconductor device fabrication techniques for crystal growth, thermal oxidation, epitaxy, diffusion, polycrystalline silicon, tungsten, ion implantation, load flow, sintering process is also useful in chemistry and metallurgy; industry.
5.氦气-He,>99.999%,用作标准气、零点气、平衡气、校正气、医疗气；于半导体器件制备工艺中晶体生长、等离子干刻、载流等工序；另外,特种混合气与工业混合气也常用。
5. helium -He, >99.999%, used as standard gas, zero point gas, balance gas, positive Qi, medical gas; semiconductor devices in the preparation process of crystal growth, plasma drying, carrying current and other processes; in addition, special mixed gas and industrial mixed gas is also commonly used.
6.氯气-Cl2,>99.96%,用作标准气、校正气；用于半导体器件制备工艺中晶体生长、等离子干刻、热氧化等工序；另外,用于水净化、纸浆与纺织品的漂白、下业废品、污水、游泳池的卫生处理；制备许多化学产品。
6. -Cl2 >99.96% is used as the standard, chlorine gas, gas, calibration gas; used for semiconductor devices in the preparation process of crystal growth, plasma dry etching and thermal oxidation processes; in addition, used for water purification, bleaching, pulp and textile industry, sewage, waste pool sanitary treatment; the preparation of a variety of chemical products.
7.氟气-F2,>98%,用于半导体器件制备工艺中等离子干刻；另外,用于制备六氟化铀、六氟化硫、三氟化硼和金属氟化物等。
7. fluorine gas -F2, >98%, used in the manufacturing process of semiconductor devices in plasma dry etching; in addition, for the preparation of uranium hexafluoride, six sulfur hexafluoride, three boron trifluoride and metal fluoride etc..
8.氨气-NH3,>99.995%,用作标准气、校正气、在线仪表标准气；用于半导体器件制备工艺中氮化工序；另外,用于制冷、化肥、石油、采矿、橡胶等工业。
8. ammonia -NH3, >99.995%, used as standard gas, calibration gas, on-line instrument standard gas; used in semiconductor device preparation process nitriding process; in addition, used in refrigeration, chemical fertilizer, petroleum, mining, rubber and other industries.
9.氯化氢-HCI,>99.995%,用作标准气；用于半导体器件制备工艺中外延、热氧化、扩散等工序；另外,用于橡胶氯氢化反应中的化学中间体、生产乙烯基和烷基氯化物时起氧氯化作用。
9. hydrogen chloride -HCI, >99.995%, used as standard gas; used in the process of semiconductor device preparation, thermal oxidation, diffusion and other processes; in addition, the chemical intermediates used in the rubber chlorine hydrogenation reaction, the production of vinyl and alkyl chloride oxygen chlorination.
10.一氧化氮-NO,>99%,用作标准气、校正气；用于半导体器件制备工艺中化学气相淀积主序；制备监控大气污染的标准混合气。
10. nitric oxide -NO, >99%, used as standard gas and calibration gas; used in semiconductor device preparation process of chemical vapor deposition main sequence; preparation of standard mixture to monitor atmospheric pollution.
11.二氧化碳-CO2,>99.99%,用作标准气、在线仪表标推气、校正气；于半导体器件制备工艺中氧化、载流工序警另外,还用于特种混合气、发电、气体置换处理、杀菌气体稀释剂、灭火剂、食品冷冻、金属冷处理、饮料充气、烟雾喷射剂、食品贮存保护气等。
11. -CO2 >99.99% is used as the standard, carbon dioxide, gas, gas, on-line instrument standard calibration gas; in the manufacturing process of semiconductor devices in the current process of police oxidation, in addition, also for special mixed gas, power generation, gas replacement treatment, sterilization of gas fire extinguishing agent, diluent, freezing, food processing, beverage filling, cold metal the smoke spraying agent, food storage and protective gas.
12.氧化亚氮-N2O,(即笑气),>99.999%,用作标准气、医疗气；用于半导体器件制备工艺中化学气相淀积、医月麻醉剂、烟雾喷射剂、真空和带压检漏；红外光谱分析仪等也用。
12. Nitrous Oxide -N2O (i.e., >99.999%, nitrous oxide) is used as the standard for medical gas, gas; semiconductor devices in the preparation process of chemical vapor deposition, medicine, anesthetic agent, smoke injection June and vacuum pressure leak detection; infrared spectrum analyzer is used.
13.硫化氢-H2S,>99.999%,用作标准气、校正气；用于半导体器件制备工艺中等离子干刻,化学工业中用于制备硫化物,如硫化钠,硫化有机物；用作溶剂；实验室定量分析用。
13. hydrogen sulfide, -H2S, >99.999%, used as standard gas and vital energy; used for plasma drying in semiconductor device manufacturing process; used in the chemical industry to prepare sulfides, such as sodium sulfide, sulfide organic compounds; used as solvent; quantitative analysis in laboratory.
14.四氯化碳-CCl4,>99.99%,用作标准气；用于半导体器件制备工艺中外延丫、化学气相淀积等工序；另外,用作溶剂、有机物的氯化剂、香料的浸出剂、纤维的脱脂剂、灭火剂、分析试剂、制备氯仿和药物等。
14. -CCl4 >99.99% is used as the standard, carbon tetrachloride, gas; semiconductor device for preparation of epitaxial y, chemical vapor deposition processes; in addition, used as a solvent, organic chlorination agent, spice leaching agent, fiber degreasing agent, fire extinguishing agent, analytical reagent, preparation of chloroform and drugs etc..
15.氰化氢-HCN,>99.9,用于半导体器件制备工艺中等离子干刻工序；制备氢氰酸溶液,金属氰化物、氰氯化物；也用于制备丙烯睛和丙烯衍生物的合成中间体。
15. -HCN >99.9, hydrogen cyanide, used in the manufacturing process of semiconductor devices in plasma dry etching process; preparation of hydrocyanic acid solution, metal cyanide, cyanogen chloride; also used in the synthesis of intermediates for preparing acrylonitrile and propylene derivatives.
16.碳酰氟-COF2,>99.99%,用于半寻体器件制备工艺中等离子干刻工序；另外,用作氟化剂。
16. carbonyl fluoride -COF2, >99.99%, used in the plasma preparation process of semi physical device preparation; in addition, as a fluoride agent.
17.碳酰硫-COS,>99.99%,用作校正气；用于半导体器件制备工艺中离子注入工序；也用于有些羧基、硫代酸、硫代碳酸盐和噻唑的合成。
17. carbonyl sulfur -COS, >99.99%, used as a vital energy; used in semiconductor device preparation process ion implantation process; also used in the synthesis of some carboxyl, thio acid, thio carbonate and thiazole.
18.碘化氢-HI,>99.95%,用于半导体器件制备工艺中离子注入工序；还用于氢碘酸溶液制备。
18. -HI >99.95%, hydrogen iodide, used in the manufacturing process of semiconductor devices in ion implantation process; also used in hydrogen iodate solution preparation.
19.嗅化氢-HBr,>99.9%,用于半导体制备工艺中等离子干刻工序；用作还原剂,制备有机及无机澳化合物。
19. hydrogen peroxide -HBr, >99.9%, used in the plasma preparation process of semiconductor preparation process; as a reducing agent, the preparation of organic and inorganic Australian compounds.
20.硅烷-SiH4,>99.999%,电阻率>100Ω/cm2,用于半导体器件制备工艺中外延、化学气相淀积等工序。
20. silane -SiH4, >99.999%, resistivity >100 ohm /cm2, used in semiconductor device preparation process epitaxy, chemical vapor deposition and other processes.
21.乙硅烷-Si2H6,>99.9%,用于半导体制备工艺中化学气相淀积。
21. silane -Si2H6, >99.9%, used for chemical vapor deposition in semiconductor fabrication process.
22.磷烷-PH3,>99.999%,用于半导体器件制备工艺中外延、扩散、化学气相淀积、离子注入等工序；磷烷与二氧化碳混合的
22., -PH3, >99.999%, used in the process of semiconductor device epitaxy, diffusion, chemical vapor deposition, ion implantation and other processes; mixed with phosphorus and carbon dioxide
